Paper
29 June 1984 Diffraction Characterization For Process Monitoring, Linewidth Measurement And Alignment
H S Damar, F P Chan, TT. Albert Wu, A R. Neureuther
Author Affiliations +
Abstract
An automated He-Ne laser spectrometer is used to explore fundamental issues associated with non-destructive IC process monitoring on diffraction from drop-in test sites. The system is also used to explore how diffraction alignment signals are affected by incidence angle variations and resist coating. The apparatus consists of an x-ray spectrometer stage which has been retrofit with a He-Ne laser system. The system is automated through the use of an IBM-PC with stepping motor controllers and an auto-ranging current to voltage converter. The diffraction from 3.0µm period features on a specially fabricated wafer consist-ing entirely of drop-in test sites is characterized and correlated with other optical and SEM measurements. Site-to-site correlations across the wafer in various directions show a very significant "bull's eye" effect especially beyond a 3 cm radius. A similar sensitivity is not seen in either image-shearing or line-edge-scanning optical measure-ments. Theoretically, a physical optics model for the diffraction from the structure is shown to be too approximate to predict the measured site-to-site diffraction signals. To explore issues associated with diffraction based alignment, such as might occur with zone plate alignment signals, the first order diffraction is studied as a function of incidence angle and resist coating thickness. The incidence angle did not show rapid variations which might be expected while resist thickness changes gave very significant signal level fluctuations.
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H S Damar, F P Chan, TT. Albert Wu, and A R. Neureuther "Diffraction Characterization For Process Monitoring, Linewidth Measurement And Alignment", Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984); https://doi.org/10.1117/12.941907
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Cited by 4 scholarly publications.
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KEYWORDS
Diffraction

Semiconducting wafers

Scanning electron microscopy

Coating

Polarization

Optical testing

Signal processing

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