Subwavelength lithography: an impact of photo mask errors on circuit performance

Linard Karklin; Stan Mazor; Devendra Joshi; Artur P. Balasinski; Valery Axelrad

doi:10.1117/12.474575

30 July 2002 Subwavelength lithography: an impact of photomask errors on circuit performance

Linard Karklin, Stan Mazor, Devendra Joshi, Artur P. Balasinski, Valery Axelrad

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474575
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The impact of photo mask manufacturing errors in the photolithography process and subsequently on the final device and test circuit (ring oscillator) performance are investigated. A statistical Monte Carlo process generates a population of normally distributed simulated photo mask errors during the reticle manufacturing process. Further steps predict how these photo mask errors impact printed poly gate patterns under different lithography conditions. Sensitivity analysis performed with the Sequoia Device Designer software tool identified the metal oxide semiconductor field effect transistor (MOSFET) channel length (L_poly) as the most sensitive MOSFET parameter and an estimate of the distribution of device performance for realistic photo mask errors is made.

Citation Download Citation

Linard Karklin, Stan Mazor, Devendra Joshi, Artur P. Balasinski, and Valery Axelrad "Subwavelength lithography: an impact of photomask errors on circuit performance", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474575

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