Extending KrF to 100-nm imaging with high-NA- and chromeless phase lithography technology

Robert John Socha; Douglas J. Van Den Broeke; Linda Yu; Will Conley; Wei Wu; J. Fung Chen; John S. Petersen; David J. Gerold; Judith van Praagh; Richard Droste; Donis G. Flagello; Stephen Hsu

doi:10.1117/12.474594

30 July 2002 Extending KrF to 100-nm imaging with high-NA- and chromeless phase lithography technology

Robert John Socha, Douglas J. Van Den Broeke, Linda Yu, Will Conley, Wei Wu, J. Fung Chen, John S. Petersen, David J. Gerold, Judith van Praagh, Richard Droste, Donis G. Flagello, Stephen Hsu

Author Affiliations +

Proceedings Volume 4691, Optical Microlithography XV; (2002) https://doi.org/10.1117/12.474594
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper the concept of chromeless phase lithography (CPL) is introduced and experimental results on an ASML PAS 5500/800 are presented. CPL is a single exposure technique and is capable of resolution enhancement on all device layers (bright and dark field masks). Line space structures through pitch are measured with cross section and have O.35jim depth of focus (DOF) at 10% exposure latitude without forbidden pitches. CPL experimental results for a k1 of 0.38 (½ pitch) are presented for three DRAM device layers, isolation brick wall, storage capacitor, and honeycomb contact. Each of these layers have a DOF of O.35jim at 10% exposure latitude. CPL experimental results are presented for a SRAM gate and contact with lOOnm feature size (k1=O.32) and have a DOF of O.35jim at 10% exposure latitude.

Citation Download Citation

Robert John Socha, Douglas J. Van Den Broeke, Linda Yu, Will Conley, Wei Wu, J. Fung Chen, John S. Petersen, David J. Gerold, Judith van Praagh, Richard Droste, Donis G. Flagello, and Stephen Hsu "Extending KrF to 100-nm imaging with high-NA- and chromeless phase lithography technology", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474594

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