Paper
30 July 2002 Analysis of focus errors in lithography using phase-shift monitors
Bruno M. La Fontaine, Mircea V. Dusa, Jouke Krist, Alden Acheta, Jongwook Kye, Harry J. Levinson, Carlo Luijten, Craig B. Sager, Jack J. Thomas, Judith van Praagh
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Abstract
We present here a procedure to characterize focus behavior on a first generation prototype 193-nm scanner using phase-shift focus monitors, which clearly identifies the influence of full field dynamic effects and that of the wafer topography and flatness. These results are used to correct the systematic errors due to incorrect tool set-up and show that proposed procedure has capability to identify focus errors and on this basis to construct a focus budget for all components: reticle, wafer, tool. We also present results using a new focus monitor based on phase gratings, which is more sensitive than the traditional phase-shift focus monitor.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno M. La Fontaine, Mircea V. Dusa, Jouke Krist, Alden Acheta, Jongwook Kye, Harry J. Levinson, Carlo Luijten, Craig B. Sager, Jack J. Thomas, and Judith van Praagh "Analysis of focus errors in lithography using phase-shift monitors", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474581
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Cited by 8 scholarly publications.
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KEYWORDS
Semiconducting wafers

Error analysis

Reticles

Lithography

Scanners

Calibration

Monochromatic aberrations

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