Development and characterization of 193-nm ultra-thin resist process

Gilles R. Amblard; Richard D. Peters; Jonathan L. Cobb; Kunishige Edamatsu

doi:10.1117/12.474227

24 July 2002 Development and characterization of 193-nm ultra-thin resist process

Gilles R. Amblard, Richard D. Peters, Jonathan L. Cobb, Kunishige Edamatsu

Proceedings Volume 4690, Advances in Resist Technology and Processing XIX; (2002) https://doi.org/10.1117/12.474227
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

The lithographic performance of a single layer 193nm resist platform, Sumitomo PAR707, was evaluated for 100nm node patterns for thicknesses ranging from 313nm to 60nm. We first demonstrated that the standard resist formulation could not be used for sub-200nm thicknesses because of unacceptable line edge roughness (LER). We then evaluated the influence of the concentration of photo acid generator (PAG) in the resist formulation of LER over the thickness range of 313nm to 60nm. High PAG loading was found to decrease LER significantly for sub-200nm thicknesses. Using the optimal formulation for minimal LER for a given thickness, process latitudes for 100nm node patterns were determined. The overall dose-focus latitudes were found to remain very close for all thicknesses, with slightly larger latitude for thicker imaging layers.

Citation Download Citation

Gilles R. Amblard, Richard D. Peters, Jonathan L. Cobb, and Kunishige Edamatsu "Development and characterization of 193-nm ultra-thin resist process", Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); https://doi.org/10.1117/12.474227

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