Quantitative Analysis Of Phosphosilicate Glass Films On Silicon Wafers For Calibration Of X-Ray Fluorescence Spectrometry Standards

Suzanne H. Weissman

doi:10.1117/12.941359

31 May 1984 Quantitative Analysis Of Phosphosilicate Glass Films On Silicon Wafers For Calibration Of X-Ray Fluorescence Spectrometry Standards

Suzanne H. Weissman

Author Affiliations +

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941359
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

The phosphorus and silicon contents of phosphosilicate glass films deposited by chemical vapor deposition (CVD) on silicon wafers were determined. These films were prepared for use as x-ray fluorescence (XRF) spectrometry standards. The thin films were removed from the wafer by etching with dilute hydrofluoric acid, and the P and Si concentrations in solution were determined by inductively coupled plasma atomic emission spectroscopy (ICP). The calculated phosphorus concentration ranged from 2.2 to 12 wt %, with an uncertainty of 2.73 to 10.1 relative percent. Variation between the calculated weight loss (summation of P₂O₅ and SiO₂ amounts as determined by ICP) and the measured weight loss (determined gravimetrically) aver-aged 4.9 %. Results from the ICP method, Fourier transform-infrared spectroscopy (FT-IR), dispersive infrared spectroscopy, electron microprobe, and x-ray fluorescence spectroscopy for the same samples are compared.

Citation Download Citation

Suzanne H. Weissman "Quantitative Analysis Of Phosphosilicate Glass Films On Silicon Wafers For Calibration Of X-Ray Fluorescence Spectrometry Standards", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941359

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