Paper
11 March 2002 Thin film stress control of absorber stack materials for EUVL reticles
James R. Wasson, Diana Convey, Pawitter J. S. Mangat, D. Frank Bazzarre, Lubomir Parobek
Author Affiliations +
Abstract
Extreme ultraviolet lithography (EUVL) is the leading candidate for next generation lithography with the potential for extendibility beyond the 50-nm node. The three-layer absorber stack for EUVL reticles consists of an absorber, repair buffer and etch-stop layers, while a two-layer absorber stack eliminates the etch-stop layer. A portion of the mask pattern distortion can be assigned to the absorber stack's film stress. Ideally, the absorber stack films would have zero stress uniformly across the mask, which would produce zero pattern distortion when the films were removed during the pattern transfer processes. Maintaining adequate thin film stress control and uniformity relies on accurate thin film thickness measurements. The thin film deposition parameters can have a significant influence on the metrology technique's ability to measure the thin film's thickness. We have studied resistive and photonic metrology techniques for absorber stack thin film thickness measurement and stress control.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Wasson, Diana Convey, Pawitter J. S. Mangat, D. Frank Bazzarre, and Lubomir Parobek "Thin film stress control of absorber stack materials for EUVL reticles", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458257
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KEYWORDS
Thin films

Resistance

Chromium

Extreme ultraviolet lithography

Distortion

Absorption

Spectroscopic ellipsometry

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