Paper
14 November 2001 Characterization of laser-induced EUV plasma sources
Sebastian Kranzusch, Klaus R. Mann
Author Affiliations +
Abstract
A laser-based EUV plasma source is described, which is going to be utilized for characterization of EUV optical components and sensoric devices in the wavelength region from 11 to 13nm. EUV radiation is generated by focusing a Nd:YAG laser into a double stream gas puff target. By the use of different target gases, broadband as well as narrow-band EUV radiation can be obtained. The emission characteristics of the radiation is monitored by the help of different diagnostic tools including a pinhole camera, an EUV spectrometer, and various EUV photodiodes, either directly or after reflection from multilayer mirrors. Moreover, first wavefront measurements of EUV radiation are performed with the help of a specially designed wavefront analyzer based on the Hartmann-Shack principle, which was sensibilized for 13nm radiation. This device can be used as an alternative to interferometric measurements for an assessment of the optical quality of EUV optics, e.g. for at wavelength monitoring of aberrations (including Zernike analysis), as well as for on-line monitoring of heating effects.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sebastian Kranzusch and Klaus R. Mann "Characterization of laser-induced EUV plasma sources", Proc. SPIE 4504, Applications of X Rays Generated from Lasers and Other Bright Sources II, (14 November 2001); https://doi.org/10.1117/12.448456
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KEYWORDS
Extreme ultraviolet

Plasma

Xenon

Helium

Mirrors

Oxygen

X-rays

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