Performance analysis and development of high-speed p-i-n infrared sensors prepared on crystalline silicon substrates

Chin-Ying Chen; Jyh-Jier Ho; Yuen Keun Fang; Shih-Fang Chen

doi:10.1117/12.427074

8 May 2001 Performance analysis and development of high-speed p-i-n infrared sensors prepared on crystalline silicon substrates

Chin-Ying Chen, Jyh-Jier Ho, Yuen Keun Fang, Shih-Fang Chen

Author Affiliations +

Proceedings Volume 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001); (2001) https://doi.org/10.1117/12.427074
Event: Optical Engineering for Sensing and Nanotechnology (ICOSN '01), 2001, Yokohama, Japan

Abstract

In this paper, different structures of high-speed infrared (IR) sensors based on amorphous silicon germanium and amorphous silicon hetero-structures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional pin amorphous photo-sensor prepared on a glass substrate, especially significant improvements in the rise time from 465 (microsecond(s) ) to 195 (microsecond(s) ), and the dark current from 50 ((mu) A) to 3.3 ((mu) A) for 5 (V) reverse bias.

Citation Download Citation

Chin-Ying Chen, Jyh-Jier Ho, Yuen Keun Fang, and Shih-Fang Chen "Performance analysis and development of high-speed p-i-n infrared sensors prepared on crystalline silicon substrates", Proc. SPIE 4416, Optical Engineering for Sensing and Nanotechnology (ICOSN 2001), (8 May 2001); https://doi.org/10.1117/12.427074

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