Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials

J. Cwirko; C. Przybysz; Robert Cwirko; Pawel Kaminski

doi:10.1117/12.425433

17 April 2001 Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials

J. Cwirko, C. Przybysz, Robert Cwirko, Pawel Kaminski

Author Affiliations +

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425433
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

The technique of low frequency noise vs temperature is a powerful tool for study of deep level impurities in semiconductors materials. The physical parameters of the deep level defects are possible to identify from noise data. Measurement system to measure low noise spectra in frequency range from 0.01 kHz at temperature from 77K to 350K has been described.

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J. Cwirko, C. Przybysz, Robert Cwirko, and Pawel Kaminski "Technique of low-frequency noise versus temperature for identification of deep-level defects in semiconductor materials", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425433

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