Development of bilayered TaSiOx-HTPSM: II

Toshifumi Yokoyama; S. Yusa; T. Okamura; H. Nakagawa; Toshiaki Motonaga; Hiroshi Mohri; Junji Fujikawa; Naoya Hayashi

doi:10.1117/12.438338

5 September 2001 Development of bilayered TaSiO_x-HTPSM: II

Toshifumi Yokoyama, S. Yusa, T. Okamura, H. Nakagawa, Toshiaki Motonaga, Hiroshi Mohri, Junji Fujikawa, Naoya Hayashi

Proceedings Volume 4409, Photomask and Next-Generation Lithography Mask Technology VIII; (2001) https://doi.org/10.1117/12.438338
Event: Photomask and Next Generation Lithography Mask Technology VIII, 2001, Kanagawa, Japan

Abstract

TaSiO_x shifter has been developed for HT-PSM for ArF and F₂ laser lithography. Adopting bilayered structure and embedding an etch-stop function into the transmittance control layer enable us to fabricate a TaSiO_x-HT without quartz damage and to control the phase precisely. And less impact of TaSiO_x shifter etching to CD was confirmed. It was confirmed this TaSiO_x-HT was inspected by conventional inspection system without any problem.

Citation Download Citation

Toshifumi Yokoyama, S. Yusa, T. Okamura, H. Nakagawa, Toshiaki Motonaga, Hiroshi Mohri, Junji Fujikawa, and Naoya Hayashi "Development of bilayered TaSiO_x-HTPSM: II", Proc. SPIE 4409, Photomask and Next-Generation Lithography Mask Technology VIII, (5 September 2001); https://doi.org/10.1117/12.438338

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