Paper
28 November 1983 Generation Of Sub-Picosecond Pulses From Mode Locked Algaas Semiconductor Lasers
J. P. van der Ziel
Author Affiliations +
Abstract
The pulse widths obtained from AlGaAs lasers have been reduced to the subpicosecond regime by passive and active mode locking of AlGaAs lasers containing a region of saturable absorption in an external cavity. Bursts of 4 pulses each of 0.65 psec long and separated by the 11 psec round trip time through the laser have been obtained by passive mode locking using a linear external cavity. By inserting a bandwidth limiting element in the cavity, the pulse width increased to ~ 20 psec. The widths obtained are in reasonable agreement with a theoretical model and correspond to dispersion and bandwidth limited propagation, respectively. Pulses as short as 0.56 psec have been obtained by the colliding pulse technique using a ring geometry external cavity.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. P. van der Ziel "Generation Of Sub-Picosecond Pulses From Mode Locked Algaas Semiconductor Lasers", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966072
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Cited by 1 scholarly publication.
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KEYWORDS
Mode locking

Pulsed laser operation

Saturable absorption

Semiconductor lasers

Composites

Fabry–Perot interferometers

Mirrors

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