Lasing Characteristics Of PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Laser Diodes

Yoshiji Horikoshi

doi:10.1117/12.937423

26 November 1983 Lasing Characteristics Of PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Laser Diodes

Yoshiji Horikoshi

Proceedings Volume 0438, Tunable Diode Laser Development and Spectroscopy Applications; (1983) https://doi.org/10.1117/12.937423
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Low threshold 6 - 15 m range lead salt diode lasers have been fabricated from closely lattice-matched PbSnSeTe-PbSeTe double-heterostructure layers grown on PbSnTe or PbTe substrates by liquid phase epitaxy. Temperature dependence of threshold current density and injected carrier lifetimes have been measured for variously doped PbSnSeTe active region lasers. Very low threshold current densities at low temperatures were obtained for compensated active region lasers. For 1 Ltm thick Bi-Tl doped active region lasers, the threshold current densities of 40 - 50 A/cm2 and 200 -250 A/cm2 at 4.2 K and 77 K, respectively, were very reproducibly obtained. The lowest observed threshold was 21 A/cm2 at 4.2 K. These results were used to discuss the factors determining the threshold current density and the highest operating temperatures.

Citation Download Citation

Yoshiji Horikoshi "Lasing Characteristics Of PbSnSeTe-PbSeTe Lattice-Matched Double Heterostructure Laser Diodes", Proc. SPIE 0438, Tunable Diode Laser Development and Spectroscopy Applications, (26 November 1983); https://doi.org/10.1117/12.937423

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