Room-temperature single-hole silicon memory cell

Nikolai T. Bagraev; Alexei D. Bouravleuv; Leonid E. Klyachkin; Anna M. Malyarenko; Serguei A. Rykov

doi:10.1117/12.417634

1 February 2001 Room-temperature single-hole silicon memory cell

Nikolai T. Bagraev, Alexei D. Bouravleuv, Leonid E. Klyachkin, Anna M. Malyarenko, Serguei A. Rykov

Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417634
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation

Abstract

We present the findings of the room temperature operation that is demonstrated by the single-hole silicon memory cell in which the single-hole silicon transistor is used as an electrometer. This memory cell is performed on the basis of the quantum wire and the quantum dot which is self-assembly formed as a multiple-tunnel junction by short-time diffusion of boron into the Si(100)-wafer. The single-hole device obtained exhibits the Coulomb oscillations and the memory effects as a hysteresis in CV characteristics which are respectively revealed by varying the gate and drain-source voltage in the process of the local tunneling spectroscopy measurements.

Citation Download Citation

Nikolai T. Bagraev, Alexei D. Bouravleuv, Leonid E. Klyachkin, Anna M. Malyarenko, and Serguei A. Rykov "Room-temperature single-hole silicon memory cell", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417634

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