Paper
14 September 2001 100-nm node lithography with KrF?
Michael Fritze, Brian Tyrrell, David K. Astolfi, Donna Yost, Paul Davis, Bruce Wheeler, Renee D. Mallen, J. Jarmolowicz, Susan G. Cann, Hua-Yu Liu, M. Ma, David Y. Chan, Peter D. Rhyins, Chris Carney, John E. Ferri, B. A. Blachowicz
Author Affiliations +
Abstract
We present results looking into the feasibility of 100-nm Node imaging using KrF, 248-nm, exposure technology. This possibility is not currently envisioned by the 1999 ITRS Roadmap which lists 5 possible options for this 2005 Node, not including KrF. We show that double-exposure strong phase- shift, combined with two mask OPC, is capable of correcting the significant proximity effects present for 100-nm Node imaging at these low k1 factors. We also introduce a new PSM Paradigm, dubbed 'GRATEFUL,' that can image aggressive 100-nm Node features without using OPC. This is achieved by utilizing an optimized 'dense-only' imaging approach. The method also allows the re-use of a single PSM for multiple levels and designs, thus addressing the mask cost and turnaround time issues of concern in PSM technology.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Fritze, Brian Tyrrell, David K. Astolfi, Donna Yost, Paul Davis, Bruce Wheeler, Renee D. Mallen, J. Jarmolowicz, Susan G. Cann, Hua-Yu Liu, M. Ma, David Y. Chan, Peter D. Rhyins, Chris Carney, John E. Ferri, and B. A. Blachowicz "100-nm node lithography with KrF?", Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); https://doi.org/10.1117/12.435719
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CITATIONS
Cited by 11 scholarly publications and 8 patents.
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KEYWORDS
Photomasks

Lithography

Optical proximity correction

Photoresist processing

Image processing

Optical lithography

Optics manufacturing

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