Paper
22 August 2001 Innovative techniques for automatic multi-CD-SEM image quality monitoring and matching
Haiqing Zhou, Chih-Yu Wang, Joseph P. Pratt
Author Affiliations +
Abstract
As semiconductor devices continue to shrink, precision and stability for the CD-SEM has become increasingly important. Given today's critical dimension (CD) measurements for DUV and sub-DUV process control and development. In particular: maintenance and monitoring of tight tolerances for, tool-to-tool, and across-fab CD-SEM matching have quickly become mandatory for chip manufacturing and development. KLA-Tencor continues to improve its measurement precision and tool automation capabilities for its 8XXX CD-SEM. For 0.25um processes and larger, current tool monitoring procedures are sufficient; however, for processes smaller than 0.25um, the demand for better system monitoring has become increasingly critical especially in multiple CD-SEM matching. In this paper, we incorporated the KLA-Tencor 8XXX CD-SEM Pattern Qualification Confirmation (PQC) for automated monitoring of CD-SEM image quality. Furthermore, we characterized patterned and etched wafers on a Polysilicon substrate. The characterization of electron-beam induced CD growth on various size line widths and pitches will be reported. From the results, we will determine the optimal substrate and pitch size for long-term CD monitoring of CD-SEM.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haiqing Zhou, Chih-Yu Wang, and Joseph P. Pratt "Innovative techniques for automatic multi-CD-SEM image quality monitoring and matching", Proc. SPIE 4344, Metrology, Inspection, and Process Control for Microlithography XV, (22 August 2001); https://doi.org/10.1117/12.436726
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KEYWORDS
Semiconducting wafers

Image quality

Critical dimension metrology

Deep ultraviolet

Etching

Image quality standards

Metrology

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