Crystallization of GeSbTe and AgInSbTe under dynamic conditions

Kelly Daly Flynn; David A. Strand

doi:10.1117/12.453396

10 January 2002 Crystallization of GeSbTe and AgInSbTe under dynamic conditions

Kelly Daly Flynn, David A. Strand

Proceedings Volume 4342, Optical Data Storage 2001; (2002) https://doi.org/10.1117/12.453396
Event: Optical Data Storage, 2001, Santa Fe, NM, United States

Abstract

Phase change materials, originally invented by S.R. Ovshinsky, are used in the leading standardized rewriteable optical storage products. GeSbTe was introduced as a high speed switching material with good cycling characteristics. AgInSbTe was originally developed for lower speed applications. These two materials systems have both differences and similarities. We compare the structural and dynamic write aspects of GeSbTe and AgInSbTe. We find the crystal structures of both systems to be simple, high-symmetry structures with low amorphous backgrounds. Under dynamic test conditions, GeSbTe crystallizes with bulk nucleation dominant behavior. At low speeds, AgInSbTe crystallizes with an edge growth mechanism but switches to bulk nucleation at high speeds. We find that in decreasing the laser spot size, there does not appear to be an improvement in erase or erase speed.

Citation Download Citation

Kelly Daly Flynn and David A. Strand "Crystallization of GeSbTe and AgInSbTe under dynamic conditions", Proc. SPIE 4342, Optical Data Storage 2001, (10 January 2002); https://doi.org/10.1117/12.453396

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