Fabrication details of GaInAsSb-based photodiode heterostructures

E. V. Kunitsyna; Igor A. Andreev; Maya P. Mikhailova; Ya. A. Parkhomenko; Yury P. Yakovlev

doi:10.1117/12.407738

28 November 2000 Fabrication details of GaInAsSb-based photodiode heterostructures

E. V. Kunitsyna, Igor A. Andreev, Maya P. Mikhailova, Ya. A. Parkhomenko, Yury P. Yakovlev

Author Affiliations +

Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407738
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

In the present paper, we report the results of our investigation, which aims to upgrade the GaInAsSb-based photodiode heterostructure technology. The main requirements on GaInAsSb solid solutions from the viewpoint of near-infrared photodiode applications are considered. Such methods for decreasing a carrier concentration in the epitaxial layers of the solid solutions as doping with a donor impurity, the use of rare-earth element Yb, growth from lead containing melt are discussed. The possibility of decreasing the GaInAsSb band gap resulting in long- wavelength photosensitivity threshold shift is demonstrated. We have made GaInAsSb/GaAlAsSb photodiodes with the long- wavelength photosensitivity threshold of 2.4 micrometers . At -2V reverse bias a lowest dark current density is 3x10^-3 A/cm², and the quantum efficiency is 60-70% at (lambda)=2.0-2.1micrometers .

Citation Download Citation

E. V. Kunitsyna, Igor A. Andreev, Maya P. Mikhailova, Ya. A. Parkhomenko, and Yury P. Yakovlev "Fabrication details of GaInAsSb-based photodiode heterostructures", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407738

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