New quality control parameter in wafer fabrication for wire-bonding integrity

Cher Ming Tan; Zhang Guan

doi:10.1117/12.404873

23 October 2000 New quality control parameter in wafer fabrication for wire-bonding integrity

Cher Ming Tan, Zhang Guan

Proceedings Volume 4229, Microelectronic Yield, Reliability, and Advanced Packaging; (2000) https://doi.org/10.1117/12.404873
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

The integrity of bondpads is of utmost importance for the functionality and reliability of an IC. It has been found recently that a factor called the localization factor of the underlying poly-silicon surface can affect the bonding integrity. In this work, a quantitative study on the effect of the factor on the wire pull test strength is performed, and quantitative relationship between the distribution of the factor and the distribution of the wire pull test strength is obtained. From the experimental data, it is found that the distribution of the wire pull test strength follows a three-parameter Weibull distribution. The quantitative relationship between the two distributions enables us to deduce the yield loss of the wire pull test strength if the distribution of the factor is known .With this relationship, the distribution of the factor can also be determined from the distribution of the wire pull test, and the reliability of chip due to thermal effect can then be estimated form the distribution of the factor.

Citation Download Citation

Cher Ming Tan and Zhang Guan "New quality control parameter in wafer fabrication for wire-bonding integrity", Proc. SPIE 4229, Microelectronic Yield, Reliability, and Advanced Packaging, (23 October 2000); https://doi.org/10.1117/12.404873

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