Submicron electro-optic measurement technique using an external hemispherical probe

Zhanguo Chen; Gang Jia; Zhifa Wu; Yunlong Liu; Chao Zhao; Maobin Yi

doi:10.1117/12.402615

9 October 2000 Submicron electro-optic measurement technique using an external hemispherical probe

Zhanguo Chen, Gang Jia, Zhifa Wu, Yunlong Liu, Chao Zhao, Maobin Yi

Proceedings Volume 4221, Optical Measurement and Nondestructive Testing: Techniques and Applications; (2000) https://doi.org/10.1117/12.402615
Event: Optics and Optoelectronic Inspection and Control: Techniques, Applications, and Instruments, 2000, Beijing, China

Abstract

In this paper an external electro-optic measuring system based on a hemispherical GaAs probe is presented. By using the system, the electrical signals propagating on a microstrip transmission line are successfully measured. The spatial resolution of the system, which is limited by the focused probing spot size, is about 0.5 micrometers , when the wavelength of the probing beam is 1.3 micrometers .

Citation Download Citation

Zhanguo Chen, Gang Jia, Zhifa Wu, Yunlong Liu, Chao Zhao, and Maobin Yi "Submicron electro-optic measurement technique using an external hemispherical probe", Proc. SPIE 4221, Optical Measurement and Nondestructive Testing: Techniques and Applications, (9 October 2000); https://doi.org/10.1117/12.402615

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