Paper
15 December 2000 Pulsed laser deposition of lithium niobate thin films
L. Canale, C. Girault-Di Bin, F. Cosset, A. Bessaudou, A. Celerier, J.-Louis Decossas, J.-C. Vareille
Author Affiliations +
Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406370
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
Pulsed laser deposition of Lithium Niobate thin films onto sapphire (0001) substrates is reported. Thin films composition and structure have been determined using Rutherford Backscattermg Spectroscopy (RBS) and X-ray diffraction ( XRD) experiments. The influe:nce of deposition parameters such as substrate temperature, oxygen pressure and target to substrate distance on the composition and the structure of the films has been studied. Deposition temperature is found to be an important parameter which enables us to grow LiNbO3 films without the Li deficient phase LiNb3O8. Nearly stoichiometric thin fihns have been obtained for an oxygen pressure of 0. 1 Ton and a substrate temperature of 800°C. Under optimized conditions the (001) preferential orientation of growth, suitable for most optical applications, has been obtained.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Canale, C. Girault-Di Bin, F. Cosset, A. Bessaudou, A. Celerier, J.-Louis Decossas, and J.-C. Vareille "Pulsed laser deposition of lithium niobate thin films", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406370
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KEYWORDS
Oxygen

Lithium niobate

Thin films

Lithium

Sapphire

Pulsed laser deposition

X-ray diffraction

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