Paper
15 December 2000 Observation of zinc blend to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering
B. Salazar-Hernandez, M. E. Constantino, Miguel Torres-Cisneros, Pedro A. Marquez-Aguilar
Author Affiliations +
Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406445
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
Epitaxial metastable (GaAs)1x(Ge2)x thin films throughout most of the full compositional x range were studied by Raman scattering. Two optical modes were present near the allowed longitudinal optic (LO) and forbidden transverse optical (TO) modes of GaAs. We get direct evidence for the zinc-blend to diamond structural transition (ZB-D transition), which is observed to occur at x-O.35, from the features observed in the compositional dependence of the ratio of the f lower energy to rb higher energy half widths at half maximum intensities rb ofthe LO like-mode and those of the integrated intensities of the forbidden TO like-mode and the allowed LU like-mode. Raman scattering data combined with X-ray diffraction results imply that the macroscopically averaged ZB-D transition has manifestation in microscopic sizes at the same concentration.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B. Salazar-Hernandez, M. E. Constantino, Miguel Torres-Cisneros, and Pedro A. Marquez-Aguilar "Observation of zinc blend to diamond transition in metastable (GaAs)1-x(Ge2)x alloys by Raman scattering", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406445
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KEYWORDS
Germanium

Diamond

Raman scattering

Raman spectroscopy

Gallium arsenide

Crystals

Gallium

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