Room-temperature operation of Nb-based single-electron transistors

Jun-ichi Shirakashi

doi:10.1117/12.408463

29 November 2000 Room-temperature operation of Nb-based single-electron transistors

Jun-ichi Shirakashi

Proceedings Volume 4086, Fourth International Conference on Thin Film Physics and Applications; (2000) https://doi.org/10.1117/12.408463
Event: 4th International Conference on Thin Film Physics and Applications, 2000, Shanghai, China

Abstract

Room temperature operation of Nb/Nb oxide-based single- electron transistors (SETs) was successfully achieved and was reported in detail. First, the SETs were fabricated by a scanning probe microscope (SPM)-based anodic oxidation technique, and then the junction area was further reduced by thermal oxidation. Ultra-small tunnel junctions were easily obtained by utilizing these two kinds of oxidation processes, and clear single-electron charging effects were observed through the Nb/Nb oxide-based SETs at room temperature.

Citation Download Citation

Jun-ichi Shirakashi "Room-temperature operation of Nb-based single-electron transistors", Proc. SPIE 4086, Fourth International Conference on Thin Film Physics and Applications, (29 November 2000); https://doi.org/10.1117/12.408463

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