Radiative recombination mechanisms in InGaN/AlGaN single-quantum-well LED revealed by time-resolved photoluminescence spectra under external electric fields

Hiromitsu Kudo; Tomoyuki Tanabe; Hiroki Ishibashi; Ruisheng Zheng; Yoichi Yamada; Tsunemasa Taguchi

doi:10.1117/12.392133

11 July 2000 Radiative recombination mechanisms in InGaN/AlGaN single-quantum-well LED revealed by time-resolved photoluminescence spectra under external electric fields

Hiromitsu Kudo, Tomoyuki Tanabe, Hiroki Ishibashi, Ruisheng Zheng, Yoichi Yamada, Tsunemasa Taguchi

Author Affiliations +

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392133
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

The radiative recombination mechanism of InGaN single-quantum- well (SOW) blue light-emitting diodes (LEDs) and InGaN double heterostructure (DH) ultraviolet (UV) LEDs has extensively been investigated by means of the dependence of photoluminescence (PL) and time-resolved PL (TRPL) spectra on an external-electric field. Two emission components are found in the luminescence spectra from each LED on the condition of reverse-bias at 77 K. It is also found that the luminescence intensity of the LEDs decreases dramatically with increasing reverse-bias voltage at room temperature (RT). The model based on field ionization of excitons cannot explain the present experimental phenomena. It is therefore suggested that the free-carrier recombination process is dominant at RT. We have also suggested that these experimental results on the blue and UV LEDs can be explained by the same recombination model. Finally, on the basis of both the experimental ecidence in In_0.08Ga_0.92N epitaxial layers and strong electron-phonon interaction, the radiative recombination mechanism on In_xGa_1-xN ternary alloys has been discussed.

Citation Download Citation

Hiromitsu Kudo, Tomoyuki Tanabe, Hiroki Ishibashi, Ruisheng Zheng, Yoichi Yamada, and Tsunemasa Taguchi "Radiative recombination mechanisms in InGaN/AlGaN single-quantum-well LED revealed by time-resolved photoluminescence spectra under external electric fields", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392133

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available