Radiation damage and surface modification of InSb(111) by MeV C+ and C2+ ions

Goutam Kuri; Tzuen Rong Yang

doi:10.1117/12.392106

11 July 2000 Radiation damage and surface modification of InSb(111) by MeV C⁺ and C₂⁺ ions

Goutam Kuri, Tzuen Rong Yang

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392106
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

The damage accumulation at the surface as well as deeper regions in InSb bombarded with MeV C⁺ and C₂⁺ ions have been studied. Mirror polished (111)-oriented InSb single crystal substrates were implanted wiht 1.00 MeV C⁺ and 2.00 MeV C₂⁺ ions to a total fluence of 5x10⁴ C-atoms/cm² at room temperature. The retained damage following implantation was analyzed by Rutherford backscattering/channeling technique and Raman scattering experiment. Fourier Transform Infrared Spectroscopy (FTIR) have been used to study the dielectric behavior, optical as well as transport properties of the implanted specimens. The FTIR spectra were analyzed within the framework of a dielectric response model. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results show that the response of InSb crystal to C⁺ ion bombardment is widely different when compared to that of C₂⁺ implantation. A tentative explanation for the results have been presented.

Citation Download Citation

Goutam Kuri and Tzuen Rong Yang "Radiation damage and surface modification of InSb(111) by MeV C⁺ and C₂⁺ ions", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392106

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