Phase calculation of (100) oriented InGaAsP grown with liquid phase epitaxy

JingYi Zhu; XiangJun Mao; Yuen Chuen Chan; Yee Loy Lam

doi:10.1117/12.392140

11 July 2000 Phase calculation of (100) oriented InGaAsP grown with liquid phase epitaxy

JingYi Zhu, XiangJun Mao, Yuen Chuen Chan, Yee Loy Lam

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392140
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

A comprehensive analysis of the phase InGaAsP quaternary lattice-matched to the (100) oriented InP substrate was carried out. Here we used a very efficient computation method, the Levenberg-Marquardt least squares minimization method, to look into the Ga$1-x)As_yP$1-y) phase diagram in great detail. We obtained a novel result: Two solutions are available for each solid ingredient in InGaAsP. One of the solutions is new, while the other agrees well with the empirical expressions relating the solution and solid compositions in the temperature range of 570 degree(s)C ~660 degree(s)C for the growth of In_xGa$1-x)As_yP$1-y) on (100) InP substrate.

Citation Download Citation

JingYi Zhu, XiangJun Mao, Yuen Chuen Chan, and Yee Loy Lam "Phase calculation of (100) oriented InGaAsP grown with liquid phase epitaxy", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392140

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