New methodology to predict energy bandgaps in GaxIn1-xAsyP1-y compounds by ANFIS theories

ShenLi Chen; DerAnn Fann

doi:10.1117/12.392185

11 July 2000 New methodology to predict energy bandgaps in Ga_xIn_1-xAs_yP_1-ycompounds by ANFIS theories

ShenLi Chen, DerAnn Fann

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392185
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

In this paper, a novel, fast, and accurate method to predict the energy bandgap E_g in Ga_xIn_1-xAs_yP_1-y quaternary compounds by using fuzzy theory and neural network is proposed. It has been developed to analyze the energy bandgap due to the adjustable ratios x and y of quaternary compounds. The prediction results are compared with experimental data obtained from actual devices. A good agreement (error < 0.75%) has been obtained on the energy bandgap versus the adjustable ratios x and y of quaternary compounds.

Citation Download Citation

ShenLi Chen and DerAnn Fann "New methodology to predict energy bandgaps in Ga_xIn_1-xAs_yP_1-ycompounds by ANFIS theories", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392185

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