High performance of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

ChangDa Tsai; Yow-Jon Lin; DayShan Liu; Ching-Ting M. Lee

doi:10.1117/12.392113

11 July 2000 High performance of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

ChangDa Tsai, Yow-Jon Lin, DayShan Liu, Ching-Ting M. Lee

Proceedings Volume 4078, Optoelectronic Materials and Devices II; (2000) https://doi.org/10.1117/12.392113
Event: Photonics Taiwan, 2000, Taipei, Taiwan

Abstract

We present the high performance of InGaP/GaAs metal- semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra- fast pulse response (over 9 Ghz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.

Citation Download Citation

ChangDa Tsai, Yow-Jon Lin, DayShan Liu, and Ching-Ting M. Lee "High performance of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact", Proc. SPIE 4078, Optoelectronic Materials and Devices II, (11 July 2000); https://doi.org/10.1117/12.392113

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