Principle of high longevity of optoelectronic devices based on CdS-PbS

Vladimir E. Bukharov; Alexandr G. Rokakh; Dmitry S. Ulyanin

doi:10.1117/12.380115

20 March 2000 Principle of high longevity of optoelectronic devices based on CdS-PbS

Vladimir E. Bukharov, Alexandr G. Rokakh, Dmitry S. Ulyanin

Proceedings Volume 4002, Saratov Fall Meeting '99: Laser Physics and Spectroscopy; (2000) https://doi.org/10.1117/12.380115
Event: Saratov Fall Meeting '99, 1999, Saratov, Russian Federation

Abstract

The experimental fact of an essential increase in optical, radiation and degradation firmness of heterogeneous optoelectronic material CdS-PbS is explained in terms of a difference in defect diffusion intensification under irradiation in the wide- and the narrow-band-gap components of the material. A quantity model of the firmness is proposed, and results of computer simulations performed in accordance with it are included which show that under exposure to optic and other kinds of radiation the mentioned difference in defect diffusion intensification makes the defects accumulate in the narrow-band-gap inclusions of CdS- PbS, which in turn leads to the increase in the firmness of the material.

Citation Download Citation

Vladimir E. Bukharov, Alexandr G. Rokakh, and Dmitry S. Ulyanin "Principle of high longevity of optoelectronic devices based on CdS-PbS", Proc. SPIE 4002, Saratov Fall Meeting '99: Laser Physics and Spectroscopy, (20 March 2000); https://doi.org/10.1117/12.380115

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