157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered medium

Michael S. Yeung; Eytan Barouch; Clifford A. Martin; James A. McClay

doi:10.1117/12.389063

5 July 2000 157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered medium

Michael S. Yeung, Eytan Barouch, Clifford A. Martin, James A. McClay

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Proceedings Volume 4000, Optical Microlithography XIII; (2000) https://doi.org/10.1117/12.389063
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

A Huygens surface excitation technique suitable for FDTD computation of electromagnetic scattering from photomask apertures embedded in layered dispersive substrates is presented. The technique is based on the decomposition of an arbitrary incident wave into its frequency components and computing the corresponding steady-state fields in the FDTD space analytically. The technique allows the effects of oblique incidence in partially coherent imaging to be taken into account rigorously in the electromagnetic computation. Numerical results for partially coherent aerial images in 157-nm lithography show that there is an approximately 20 percent difference between the aerial image intensity computed by FDTD and that computed by using the Kirchhoff approximation. This difference can in part be attributed to energy dissipation in the lossy chromium layer through which the photomask apertures are etched.

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Michael S. Yeung, Eytan Barouch, Clifford A. Martin, and James A. McClay "157-nm lithography simulation using a finite-difference time-domain method with oblique incidence in a multilayered medium", Proc. SPIE 4000, Optical Microlithography XIII, (5 July 2000); https://doi.org/10.1117/12.389063

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KEYWORDS

Finite-difference time-domain method

Lithography

Photomasks

Multilayers

Chromium

Computer simulations

Interfaces

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