Metrology issues of reticles with optical proximity correction-assist features using the atomic force microscope

Kuo-Jen Chao; Robert J. Plano; Jeffrey R. Kingsley

doi:10.1117/12.386533

2 June 2000 Metrology issues of reticles with optical proximity correction-assist features using the atomic force microscope

Kuo-Jen Chao, Robert J. Plano, Jeffrey R. Kingsley

Author Affiliations +

Proceedings Volume 3998, Metrology, Inspection, and Process Control for Microlithography XIV; (2000) https://doi.org/10.1117/12.386533
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Critical dimension (CD) control is very important for the successful fabrication of integrated circuit (IC) devices. Line-widths of patterns such as chrome lines or clear lines on the reticle have to be monitored. In this work, reticles with optical proximity correction (OPC) assist features intended for deep ultraviolet (DUV) exposure have been investigated using the atomic force microscope (AFM). Metrology issues related to using AFM to measure CD are presented. A line-width determination method to produce a consistent CD measurement is proposed. The CD uniformity for a 4X, 6' reticle intended for DUV exposure is found to be within plus or minus 20 nm over a range of 2.00 micrometer to 0.4 micrometer and to be worse when the widths of the lines are nominally less than 0.4 micrometer.

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Kuo-Jen Chao, Robert J. Plano, and Jeffrey R. Kingsley "Metrology issues of reticles with optical proximity correction-assist features using the atomic force microscope", Proc. SPIE 3998, Metrology, Inspection, and Process Control for Microlithography XIV, (2 June 2000); https://doi.org/10.1117/12.386533

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