Improvements of the membrane bulging method for stress determination of silicon open stencil masks for ion projection lithography

Artur Degen; Jens Voigt; Eva Sossna; Feng Shi; Ivo W. Rangelow; Ernst Haugeneder; Hans Loeschner

doi:10.1117/12.377096

3 February 2000 Improvements of the membrane bulging method for stress determination of silicon open stencil masks for ion projection lithography

Artur Degen, Jens Voigt, Eva Sossna, Feng Shi, Ivo W. Rangelow, Ernst Haugeneder, Hans Loeschner

Author Affiliations +

Proceedings Volume 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2000) https://doi.org/10.1117/12.377096
Event: 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 1999, Munich, Germany

Abstract

Ion Projection Lithography is one promising candidate for a next generation IC technology. Within this field of research one of the most critical aspects is the development of open stencil masks. The stress formation during the mask fabrication process affects the critical dimensions of the structures to be formed. The stress measurement in the mask blanks is performed by the well known bulging method. The accuracy of the membrane bulging method depends on the correct description of the bulged membrane shape. The accuracy of the method can be improved by including the deviations from spherical approximation by correcting the membrane bulging formula. Additionally, the shape of the membrane deformation and the improved bulging formula are compared with FE simulations. The commonly used interferometer technique can not be used to determine the absolute zero point of the membrane (e.g. plane membrane). With the diffraction image technique the zero point is determined by the geometry. Additionally, by bulging of the membrane in two directions, the zero point can be deduced from the anti-symmetry of the pressure vs. deflection curve.

Citation Download Citation

Artur Degen, Jens Voigt, Eva Sossna, Feng Shi, Ivo W. Rangelow, Ernst Haugeneder, and Hans Loeschner "Improvements of the membrane bulging method for stress determination of silicon open stencil masks for ion projection lithography", Proc. SPIE 3996, 16th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (3 February 2000); https://doi.org/10.1117/12.377096

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