Paper
13 April 2000 Up-conversion emission in Yb3+ sensitized YV04:Er3+ crystals
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Abstract
Up-conversion by Yb3+ sensitization in Er3+ doped YVO4 crystals has been studied under excitation with 976 nm laser diode. Up-converted (available in paper) emission bands are observed at 490, 547, 554, 660 and 670 nm at room temperature, together with down-converted Yb3+ emission at 1010 nm and Er3+ emission at 1470 - 1630 nm. Excited state absorption from the 4I11/2 state of Er3+ to the 4F7/2 state is observed in the Yb3+ emission spectrum. It is confirmed, from quadratic dependence on pump intensity, the up-conversion is induced by two-photon excitation process.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taiju Tsuboi, Yongfeng Ruan, and Xiaoming Wang "Up-conversion emission in Yb3+ sensitized YV04:Er3+ crystals", Proc. SPIE 3942, Rare-Earth-Doped Materials and Devices IV, (13 April 2000); https://doi.org/10.1117/12.382847
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KEYWORDS
Crystals

Absorption

Erbium

Laser crystals

Ions

Semiconductor lasers

Energy transfer

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