Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb)

Andrew R. Novoselov; Anatoly G. Klimenko; Evgeny V. Fedosenko; A. E. Plotnikov

doi:10.1117/12.387581

7 June 2000 Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb)

Andrew R. Novoselov, Anatoly G. Klimenko, Evgeny V. Fedosenko, A. E. Plotnikov

Proceedings Volume 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V; (2000) https://doi.org/10.1117/12.387581
Event: Symposium on High-Power Lasers and Applications, 2000, San Jose, CA, United States

Abstract

We studied stages of formation of laser craters for the purpose of decreasing a defeat zone of a semiconductor material close to laser craters. The researches were carried out using SEM and optical microscopy. This paper is devoted to results of optimization of the laser radiation for applications in microelectronics. The principles of optimization of a wavelength, pulse duration and repetition frequency of laser radiation are determined. The effect of the diameter of a laser spot onto the process of formation of a laser crater is shown. It is opinion of the authors, that the main criteria that necessarily should be taken into account when doing the laser scribing of semiconductor wafers, are as follows: Selection of a laser source wavelength with maximum coefficient of absorption in a target. The energy density in a laser spot on target must be less than threshold for the material; The time gap between pulses is determined by time of the ending of processes in the material ofthe target. The decrease in diameter of a laser beam allows maximum depth to diameter relation to be achieved.

Citation Download Citation

Andrew R. Novoselov, Anatoly G. Klimenko, Evgeny V. Fedosenko, and A. E. Plotnikov "Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb)", Proc. SPIE 3933, Laser Applications in Microelectronic and Optoelectronic Manufacturing V, (7 June 2000); https://doi.org/10.1117/12.387581

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