Ion-source-assisted pulsed laser deposition of carbon nitride thin films

Z. F. He; Yongfeng Lu; ZhiHong Mai; ZhongMin Ren

doi:10.1117/12.368509

4 November 1999 Ion-source-assisted pulsed laser deposition of carbon nitride thin films

Z. F. He, Yongfeng Lu, ZhiHong Mai, ZhongMin Ren

Proceedings Volume 3898, Photonic Systems and Applications in Defense and Manufacturing; (1999) https://doi.org/10.1117/12.368509
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Pulsed laser generated carbon plasma combined with a nitrogen ion source has been used to synthesize carbon nitride thin films. This synthesis method has both advantages of pulsed laser deposition (PLD) and ion implantation. The average ion beam current, the beam voltage, the laser pulse energy, and substrate temperature can be controlled systematically. STM has been sued to study the surface properties. The (dI/dV)/(I/V) values have been calculated to study the local density of states density of states on the film surface. Experiment results have been analyzed by Raman spectra to see the influence of the different ion beam voltages. Thin films CN_x with nitrogen content of 32 percent have been investigated by x- ray photoelectron spectroscopy. The result can reveal the formation of different bonds. Fourier transform IR was also used to study the bonding of films. The hardness of the synthesized thin film was analyzed be a nanoindenter. The result shows that the hardness of carbon nitride is quite high.

Citation Download Citation

Z. F. He, Yongfeng Lu, ZhiHong Mai, and ZhongMin Ren "Ion-source-assisted pulsed laser deposition of carbon nitride thin films", Proc. SPIE 3898, Photonic Systems and Applications in Defense and Manufacturing, (4 November 1999); https://doi.org/10.1117/12.368509

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