Analysis and design of AlGaInP single-quantum-well LED

LiangPao Lee; Soo-Jin Chua

doi:10.1117/12.370302

12 November 1999 Analysis and design of AlGaInP single-quantum-well LED

LiangPao Lee, Soo-Jin Chua

Proceedings Volume 3896, Design, Fabrication, and Characterization of Photonic Devices; (1999) https://doi.org/10.1117/12.370302
Event: International Symposium on Photonics and Applications, 1999, Singapore, Singapore

Abstract

Calculations are done and compared for two AlGaInP single- quantum-well (SQW) LED structures: step separate- confinement-heterostructure (SCH) SQW structure and graded- index (GRIN) SCH-SQW structure. It is found that the latter has better performance in terms of spontaneous lifetime and injection efficiency. This is attributed to greater barrier height to electron leakage and substantial overlap between wavefunctions of different quantum numbers in the GRIN-SCH- SQW structure. Results also show that the GRIN layer thickness has no influence on the QW energy levels. spontaneous lifetime and injection efficiency in a GRIN-SCH- SQW.

Citation Download Citation

LiangPao Lee and Soo-Jin Chua "Analysis and design of AlGaInP single-quantum-well LED", Proc. SPIE 3896, Design, Fabrication, and Characterization of Photonic Devices, (12 November 1999); https://doi.org/10.1117/12.370302

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