Transferable silicon nitride microcavities

Kevin J. Winchester; Sue M.R. Spaargaren; John M. Dell

doi:10.1117/12.364511

1 October 1999 Transferable silicon nitride microcavities

Kevin J. Winchester, Sue M.R. Spaargaren, John M. Dell

Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364511
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

In the field of micro-electro-mechanical systems (MEMS), the ability to construct self supporting or suspended structures is essential for many devices. Well-established technologies exist for the fabrication of such structures, many of which rely on the deposition of SiN_x layers. Such layers are usually grown by low-pressure chemical vapor deposition which requires high process temperatures. Lower process temperatures can be achieved through plasma enhanced chemical vapor deposition, however even these lower temperatures place a major restriction on the order in which processing can occur. For some semiconductor materials such as HgCdTe, this prohibits the straightforward use of such structures. A novel self-supporting SiN_x membrane technology that can be applied to temperature sensitive semiconductor devices has been developed. In this technology the microcavity structure is constructed on a reusable GaAs substrate, from which it can be removed and bonded via van der Waals forces to a new substrate or device.

Citation Download Citation

Kevin J. Winchester, Sue M.R. Spaargaren, and John M. Dell "Transferable silicon nitride microcavities", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364511

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