Practical applications of IDEAL exposure method

Masanobu Hasegawa; Kenji Saitoh; Minoru Yoshii; Akiyoshi Suzuki

doi:10.1117/12.373298

30 December 1999 Practical applications of IDEAL exposure method

Masanobu Hasegawa, Kenji Saitoh, Minoru Yoshii, Akiyoshi Suzuki

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373298
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

IDEAL (Innovative Double Exposure by Advanced Lithography) has been introduced as a new double exposure technique to realize k₁ equals 0.3 optical lithography. IDEAL uses a rough pattern mask with patterns close to the actual device design and a simple fine pattern PSM to resolve very high contrast images on a wafer. IDEAL can be applied to complicated two dimensional patterns for actual device such as double, rectangular or T-shaped gate patterns. Results of IDEAL on different pattern types are shown. IDEAL significantly reduces MEF (Mask Error enhancement Factor). At various rough and fine dose ratios, IDEAL demonstrates the advantage especially at fine linewidths below 150 nm where the MEF of single conventional exposures increase sharply. Our extensive calculation of MEF with various patterns and experiments on complicated two dimensional patterns further confirm that IDEAL is a practical method in advanced device manufacturing.

Citation Download Citation

Masanobu Hasegawa, Kenji Saitoh, Minoru Yoshii, and Akiyoshi Suzuki "Practical applications of IDEAL exposure method", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373298

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