Analysis of photomask CD errors depending on development methods

Seong-Yong Moon; Won-Tai Ki; Byung-Cheol Cha; Seong-Woon Choi; Hee-Sun Yoon; Jung-Min Sohn

doi:10.1117/12.373352

30 December 1999 Analysis of photomask CD errors depending on development methods

Seong-Yong Moon, Won-Tai Ki, Byung-Cheol Cha, Seong-Woon Choi, Hee-Sun Yoon, Jung-Min Sohn

Proceedings Volume 3873, 19th Annual Symposium on Photomask Technology; (1999) https://doi.org/10.1117/12.373352
Event: Photomask Technology and Management, 1999, Monterey, CA, United States

Abstract

As optical lithography will be extended to device generations below 150 nm of design rule, the critical dimension (CD) uniformity on a photomask is required to be as small as 13 nm (3(sigma) ). The relationship between development method and dark erosion is discussed in view of CD variations. The temperature variation on a photomask is found to be more than 4 degrees Celsius for a conventional spin-spray development. An optimized process using a 'puddle process' to minimize developer temperature effect and non-uniform spray pressure effect on CD variation. The CD uniformity using the optimized process brings 11 nm in 3(sigma) over 127 mm X 127 mm area on a 6-inch mask.

Citation Download Citation

Seong-Yong Moon, Won-Tai Ki, Byung-Cheol Cha, Seong-Woon Choi, Hee-Sun Yoon, and Jung-Min Sohn "Analysis of photomask CD errors depending on development methods", Proc. SPIE 3873, 19th Annual Symposium on Photomask Technology, (30 December 1999); https://doi.org/10.1117/12.373352

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