Paper
10 June 1999 Sensitivity of an IR photodiode array with signal integration by thermoresistors
Pavel S. Serebrennikov
Author Affiliations +
Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350894
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation
Abstract
It is shown that a choice of the thermoresistor thermal time constant of the order of frame time is not sufficient condition for achieving the signal to noise ratio which corresponds to the integration time of the order of frame time. Conditions are found when one get improving signal to noise ratio approximately (root)M times in comparison with the case without signal integration (M number of pixels in the array). Sensitivity (NEP for a monochromatic signal and NETD) of IR photodiode array with signal integration by the thermoresistors are found for state-of-the-art parameters. Comparison is made of this characteristics with characteristics of analogous array without signal integration, with integration by capacitor, with characteristics of bolometric array.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pavel S. Serebrennikov "Sensitivity of an IR photodiode array with signal integration by thermoresistors", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350894
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KEYWORDS
Photodiodes

Resistance

Bolometers

Diodes

Capacitors

Signal to noise ratio

Nitrogen

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