Peculiarities of growth and electrophysical properties of epitaxial films of Pb1-xSnxSe:In

Eldar Yu. Salaev; I. R. Nuriyev; Ch. J. Jalilova; N. V. Faradjev

doi:10.1117/12.350900

10 June 1999 Peculiarities of growth and electrophysical properties of epitaxial films of Pb_1-xSn_xSe:In

Eldar Yu. Salaev, I. R. Nuriyev, Ch. J. Jalilova, N. V. Faradjev

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350900
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

Films of Pb_1-xSn_xSe (x equals 0,03 divided by 0,07) doped by In atoms have been grown on the substrate of BaF₂(111,100) by a molecular beam condensation method. Peculiarities of growth and their electrophysical properties have been investigated. Electronographic, X-ray diffractometric and electron-microscopic methods, obtained the data on structure of films. Epitaxial films by the thickness about 1 divided by 1,5 micrometers were obtained at the substrate temperature equal (400 divided by 450) +/- 0,5C degree(s). The magnitudes of half-width of swinging curve of the X-ray diffraction changed within limits of W_1/2 equals 100 divided by 200 angl.s. The concentration and mobility of the charge carriers were n equals (2 divided by 5) (DOT) 10¹⁶ cm^-3 and (mu) equals (2 divided by 3) (DOT) 10⁴ cm²/V(DOT)s, accordingly. Films had a mirror-smooth surface by planes of growth (111,100) on various substrates. The temperature dependencies of Hall coefficient R_H of the Pb_1-xSn_xSe doped by indium (0,3 divided by 0,5 mass %) with different concentration of the charge carriers were investigated. It is shown that mobility determined from Hall and electroconductivity measurements in the impurity conductivity region changes on degree-low (mu) approximately T^-v, where v equals 1,6 divided by 2,5.

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Eldar Yu. Salaev, I. R. Nuriyev, Ch. J. Jalilova, and N. V. Faradjev "Peculiarities of growth and electrophysical properties of epitaxial films of Pb_1-xSn_xSe:In", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350900

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