Influence of ionizing radiation based on basic parameters of photodiodes based on indium selenide

K. A. Askerov

doi:10.1117/12.350886

10 June 1999 Influence of ionizing radiation based on basic parameters of photodiodes based on indium selenide

K. A. Askerov

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350886
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

The influence of ionizing irradiation of different kind- imitation factors of nuclear explosion and proton irradiation on photoelectric properties of photodiodes on the base of indium selenide have been investigated. Photoreceivers was exposed to ionizing irradiation of following kinds: influence of damaging factors of nuclear explosion with neutrons energy of E_n > 0.1 MeV and fluence of 3 (DOT) 10¹² cm^-2 and pulse gamma- irradiation of power 1 (DOT) 10¹⁰ R/s; influence of proton irradiation with fluence 5 (DOT) 10¹³ cm^-2. It is shown that pulse gamma- and neutron- irradiation essentially acts on monochromatic and volt-watt sensitivities of photodiodes, increasing them about 20 - 40%. In short-wave region of a spectrum significant increasing is observed, while sharp decreasing in sensitivity in long-wave region occurs. Non-uniformity of amplitude-frequency characteristics increases up to 40 - 65%. This fact is explained by the widening of space-charge region in photodiodes. This result in decreasing the capacity of p-n-junction and widening of transmission band. Results obtained may be used for the fabrication of photodiodes, operating in near IR-region of spectrum.

Citation Download Citation

K. A. Askerov "Influence of ionizing radiation based on basic parameters of photodiodes based on indium selenide", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350886

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