HgCdTe photodiode performance degradation

L. A. Bovina; K. O. Boltar; Vitaly I. Stafeev; Vladimir M. Lakeenkov; M. A. Loschinina

doi:10.1117/12.350885

10 June 1999 HgCdTe photodiode performance degradation

L. A. Bovina, K. O. Boltar, Vitaly I. Stafeev, Vladimir M. Lakeenkov, M. A. Loschinina

Proceedings Volume 3819, International Conference on Photoelectronics and Night Vision Devices; (1999) https://doi.org/10.1117/12.350885
Event: International Conference on Photoelectronics and Night Vision Devices, 1998, Moscow, Russian Federation

Abstract

Cadmium mercury telluride (MCT) photodiodes stability has been investigated. Possible reasons of photodiodes performances degradation are analyzed. High temporal and thermal stability at storage temperature up to 70 degree(s)C of ion implanted MCT photovoltaic detectors is shown.

Citation Download Citation

L. A. Bovina, K. O. Boltar, Vitaly I. Stafeev, Vladimir M. Lakeenkov, and M. A. Loschinina "HgCdTe photodiode performance degradation", Proc. SPIE 3819, International Conference on Photoelectronics and Night Vision Devices, (10 June 1999); https://doi.org/10.1117/12.350885

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