Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors

Alex Siew-Wan Lee; E. Herbert Li

doi:10.1117/12.366730

26 October 1999 Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors

Alex Siew-Wan Lee, E. Herbert Li

Author Affiliations +

Proceedings Volume 3794, Materials and Electronics for High-Speed and Infrared Detectors; (1999) https://doi.org/10.1117/12.366730
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

Intermixing effect in type-II Ga_0.6In_0.4Sb/InAs superlattices is studied. The interdiffusion of both group- III and group V atoms across the heterointerface modifies the superlattices optical properties and electronic structures. The intermixed-induced strain has different effects on the band structure of the respective strained layers. Conduction band is undergone successive changes where the barrier height was initially increased in potential and subsequently became lower than the as-grown one for increasing extent of intermixing. Consequently the confinement profile is tuned from an abrupt interface to a graded shape. Intersubband transition is investigated in the intermixed superlattices where the absorption peak wavelength is red shifted continuously from the as grown 11.7 to the interdiffused 12.5 micrometers . Both the intermixed absorption and responsivity are reducing in magnitude. However, dark current is reduced at initial stage of intermixing as a result of the increase in confinement potential and the effective barrier width. Detectivity at 77 K is enhanced for the intermixed detector from 2.5 X 10¹¹ to 3 X 10¹¹ cm(root)Hz/W, which is comparable to the MCT detector.

Citation Download Citation

Alex Siew-Wan Lee and E. Herbert Li "Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors", Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); https://doi.org/10.1117/12.366730

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Absorption

Superlattices

Diffusion

Chemical species

Electrons

Sensors

Indium arsenide

Show All Keywords

Keywords/Phrases

Search In:

Publication Years