Gomez W. Wright,1 Douglas Chinn,1 Bruce Andrew Brunett,1 Mark J. Mescher,1 James C. Lund,1 Richard W. Olsen,1 F. Patrick Doty,1 Tuviah E. Schlesinger,1 Ralph B. James,1 Kaushik Chattopadhyay,2 Robert Cam Wingfield,2 Arnold Burger2
1Sandia National Labs. (United States) 2Fisk Univ. (United States)
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We have studied the ability of different oxidizing agents, other than H2O2 to reduce the surface leakage current of CdZnTe devices. All chemical treatments were performed in aqueous solutions, at room temperature, with weight percent concentrations of 2.5g/25ml. Before and after I-V curves were obtained. It was found that by increasing the basicity of the chemical treatment, greater reduction in surface leakage current occurred. The result show that these alternative chemical treatments reduced the surface leakage current as well as or better than H2O2 chemical treatment.
Gomez W. Wright,Douglas Chinn,Bruce Andrew Brunett,Mark J. Mescher,James C. Lund,Richard W. Olsen,F. Patrick Doty,Tuviah E. Schlesinger,Ralph B. James,Kaushik Chattopadhyay,Robert Cam Wingfield, andArnold Burger
"Exploratory search for improved oxidizing agents used in the reduction of surface leakage currents of CdZnTe detectors", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366617
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Gomez W. Wright, Douglas Chinn, Bruce Andrew Brunett, Mark J. Mescher, James C. Lund, Richard W. Olsen, F. Patrick Doty, Tuviah E. Schlesinger, Ralph B. James, Kaushik Chattopadhyay, Robert Cam Wingfield, Arnold Burger, "Exploratory search for improved oxidizing agents used in the reduction of surface leakage currents of CdZnTe detectors," Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366617