Au/CdZnTe/CdS m-i-n detectors fabricated by sputtering technique

Stephen U. Egarievwe; Henry Chen; Kaushik Chattopadhyay; Jean-Olivier Ndap; Oludurotimi O. Adetunji; T. McMillan; Oghaghare K. Okobiah; Arnold Burger; Ralph B. James

doi:10.1117/12.366629

19 October 1999 Au/CdZnTe/CdS m-i-n detectors fabricated by sputtering technique

Stephen U. Egarievwe, Henry Chen, Kaushik Chattopadhyay, Jean-Olivier Ndap, Oludurotimi O. Adetunji, T. McMillan, Oghaghare K. Okobiah, Arnold Burger, Ralph B. James

Author Affiliations +

Proceedings Volume 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics; (1999) https://doi.org/10.1117/12.366629
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1999, Denver, CO, United States

Abstract

The electrical and detection properties of Au/CdZnTe/CdS (m- i-n) gamma-ray and x-ray detectors, fabricated by sputtering technique, have been studied. The CdZnTe crystal was grown by the High Pressure Bridgman method. Current-voltage measurements show that the leakage current is reduced by an order of magnitude when the m-i-n detector is reversed biased. This is due to increased contact barriers, which produced effective blocking contacts. An energy resolution of 3.6 percent for the 59.6 keV line of ²⁴¹Am was obtained in the reverse bias, with almost no energy resolution for the forward bias due to excessive leakage current.

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Stephen U. Egarievwe, Henry Chen, Kaushik Chattopadhyay, Jean-Olivier Ndap, Oludurotimi O. Adetunji, T. McMillan, Oghaghare K. Okobiah, Arnold Burger, and Ralph B. James "Au/CdZnTe/CdS m-i-n detectors fabricated by sputtering technique", Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); https://doi.org/10.1117/12.366629

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