Paper
28 April 1999 Alignment performance as a function of chemical mechanical polishing techniques and stepper optimization
Bryan Hubbard, Albert H. Liu
Author Affiliations +
Proceedings Volume 3741, Lithography for Semiconductor Manufacturing; (1999) https://doi.org/10.1117/12.346882
Event: Microelectronic Manufacturing Technologies, 1999, Edinburgh, United Kingdom
Abstract
Optimized alignment for chemical mechanical polishing has been studied in detail to ascertain the best overall overlay and process conditions. This paper describes the methodology of alignment mark design and testing in conjunction with chemical mechanical polishing optimization for technologies of 0.35micrometers and below. The planarization of the substrate material by CMP combined with asymmetric metal deposition can cause linear alignment displacement. This study investigated chemical mechanical polish slurry types, hardware configuration, and process variables on general alignment conditions. Further study on alignment mark designs and photolithography stepper settings are investigated on a subset of optimized chemical mechanical polish conditions. An alignment condition where the result of less than 0.10 micrometers was obtained.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bryan Hubbard and Albert H. Liu "Alignment performance as a function of chemical mechanical polishing techniques and stepper optimization", Proc. SPIE 3741, Lithography for Semiconductor Manufacturing, (28 April 1999); https://doi.org/10.1117/12.346882
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KEYWORDS
Optical alignment

Chemical mechanical planarization

Semiconducting wafers

Iron

Metals

Tungsten

Reticles

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