III-V semiconductor-based MOEMS

Pierre Viktorovitch

doi:10.1117/12.341197

10 March 1999 III-V semiconductor-based MOEMS

Pierre Viktorovitch

Proceedings Volume 3680, Design, Test, and Microfabrication of MEMS and MOEMS; (1999) https://doi.org/10.1117/12.341197
Event: Design, Test, and Microfabrication of MEMS/MOEMS, 1999, Paris, France

Abstract

The state of the art of III-V semiconductor based Micro- Opto-Mechanical Systems (MOEMS) is presented with a special emphasis on InP and related materials. It is shown that the MOEMS technology can enhance considerably the capabilities of optical micro-cavities, which are considered as a major component for optical signal processing and light generation. Illustrations of the potential of III-V MOEMS are given in the fields of Optical Telecommunications and Near-IR photodetection. Future prospects implying the marriage of MOEMS approach with Photonic Band Gap concepts are proposed.

Citation Download Citation

Pierre Viktorovitch "III-V semiconductor-based MOEMS", Proc. SPIE 3680, Design, Test, and Microfabrication of MEMS and MOEMS, (10 March 1999); https://doi.org/10.1117/12.341197

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