Paper
11 June 1999 Polymer-platform-dependent characteristics of 193-nm photoresists
Juliann Opitz, Robert D. Allen, Gregory Breyta, Donald C. Hofer, Narayan Sundararajan, Christopher Kemper Ober
Author Affiliations +
Abstract
The development and refinement of 193 nm single layer photoresist has continued to progress at a quick pace. Published resists efforts have historically been partitioned by polymer family: acrylic, addition cyclic olefin, and alternating cyclic olefin/maleic anhydride. The polymer platforms for 193 nm resists have been a radical departure from 248 nm resists, therefore, publications to date have largely focused on the attributes of each specific variety. Since the physical and chemical properties of the aforementioned polymer platforms are very different, it would follow that, in principal, typical formulation strategies should produce varying results in each platform. This paper investigates the effects of three typical photoacid generators and three model polymers on various aspects of lithographic evaluation.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juliann Opitz, Robert D. Allen, Gregory Breyta, Donald C. Hofer, Narayan Sundararajan, and Christopher Kemper Ober "Polymer-platform-dependent characteristics of 193-nm photoresists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350161
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Absorbance

Photoresist materials

Semiconducting wafers

Interfaces

Lithography

Polymer thin films

Back to Top