DUV and e-beam chemistry of high-sensitivity positive PMMA-based resist

A. Uhl; Juergen Bendig; Ulrich A. Jagdhold; Joachim J. Bauer

doi:10.1117/12.350192

11 June 1999 DUV and e-beam chemistry of high-sensitivity positive PMMA-based resist

A. Uhl, Juergen Bendig, Ulrich A. Jagdhold, Joachim J. Bauer

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350192
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

We present an investigation to study the degradation of PMMA, poly(methyl methacrylate), and ARP-610, poly(methyl methacrylate-co-methacrylic acid), during e-beam and DUV exposure. The change in the chemical structure of the polymer materials were analyzed using UV, IR, NMR spectroscopy, gel permeation chromatography and GC-MS. The formation of anhydrides within the isotactic parts of the co-polymer causes a bimodel and multimodal distribution of the fragments and, therefore, a more efficient dissolution process.

Citation Download Citation

A. Uhl, Juergen Bendig, Ulrich A. Jagdhold, and Joachim J. Bauer "DUV and e-beam chemistry of high-sensitivity positive PMMA-based resist", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350192

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